Microcavity semiconductor laser with enhanced spontaneous emission

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Abstract
A metal-clad optical waveguide with a semiconductor microcavity structure is proposed to increase the coupling efficiency of spontaneous emission into a lasing mode (spontaneous emission coefficient β) and to increase a total spontaneous emission rate simultaneously. Such a microcavity semiconductor laser with enhanced spontaneous emission has novel characteristics, including high quantum efficiency, low threshold pump rate, broad modulation bandwidth, and intensity noise reduced to below the shot-noise limit (amplitude squeezing).