Anomalous-Heat Conduction of Ion-Implanted Amorphous Layers in Silicon Crystals Using a Laser-Probe Technique

This publication has 9 references indexed in Scilit:

• Thermal conductivity of amorphous silicon
  Physica Status Solidi (a), 1983
• Quantendruck und Kompressibilität mit Madelung-Konstante
  The Science of Nature, 1982
• Contribution to electron beam annealing of high-dose ion-implanted polysilicon
  Physica Status Solidi (a), 1982
• Kinetics of scanned electron beam annealing of high-energy as ion implanted silicon
  Physica Status Solidi (a), 1981
• Epitaxial alignment of polycrystalline Si films on (100) Si
  Applied Physics Letters, 1980
• Electrical Activation of Implanted Arsenic in Silicon during Low Temperature Anneal
  Journal of the Electrochemical Society, 1978
• Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ions
  Journal of Applied Physics, 1977
• New Method for Determining Activation Energies Applied to Substages III Annealing of Au‐Ion Irradiated Au Films
  Physica Status Solidi (b), 1969
• Method for Determining Silicon Diffusion Coefficients in Silicon and in Some Silicon Compounds
  Physical Review Letters, 1966