Use of a three-layer quantum-well structure to achieve an absorption edge blueshift
- 7 March 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (10) , 1251-1253
- https://doi.org/10.1063/1.110855
Abstract
Theoretical calculations are used to propose a novel structure for a quantum-well electro-optic device which gives a large blueshift of the absorption edge on application of an electric field. The structure provides spatial separation of the electron-hole pair in the ground state at zero applied field. This is achieved by use of two materials within the well which have a type II band line-up relative to each other but are type I relative to the barrier material. The combination of InAs0.4P0.6/In0.53Ga0.47As wells with InP barriers is expected to fulfill these requirements and also to operate in the 1.5 μm region.Keywords
This publication has 17 references indexed in Scilit:
- Comment on ‘‘Optical bistability in self-electro-optic effect devices with asymmetric quantum wells’’ and on ‘‘Novel configuration of self-electro-optic effect device based on asymmetric quantum wells’’Applied Physics Letters, 1990
- Observation of room-temperature blue shift and bistability in a strained InGaAs-GaAs 〈111〉 self-electro-optic effect deviceApplied Physics Letters, 1990
- Field-induced decoupling of quantized levels and blue shift of absorption edge in a potential inserted quantum well structureApplied Physics Letters, 1989
- Optical bistability in self-electro-optic effect devices with asymmetric quantum wellsApplied Physics Letters, 1989
- Blue shift of the absorption edge in AlGaInAs-GaInAs superlattices: Proposal for an original electro-optical modulatorApplied Physics Letters, 1988
- Novel configuration of self-electro-optic effect device based on asymmetric quantum wellsApplied Physics Letters, 1988
- Quantum-confined Stark effect in graded-gap quantum wellsJournal of Applied Physics, 1987
- The quantum well self-electrooptic effect device: Optoelectronic bistability and oscillation, and self-linearized modulationIEEE Journal of Quantum Electronics, 1985
- Electric field dependence of optical absorption near the band gap of quantum-well structuresPhysical Review B, 1985
- Novel hybrid optically bistable switch: The quantum well self-electro-optic effect deviceApplied Physics Letters, 1984