Deep levels of chromium-hydrogen complexes in silicon
- 15 April 1994
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 75 (8) , 3978-3981
- https://doi.org/10.1063/1.356018
Abstract
Deep levels related to chromium in n-type silicon have been investigated using deep level transient spectroscopy (DLTS) and concentration profile measurements. The DLTS measurement reveals four electron traps of EC−0.22, EC−0.28, EC−0.45, and EC−0.54 eV in chromium-doped samples. The trap of EC−0.22 eV is a donor due to interstitial chromium. The other three traps are observed near the surface region of samples etched with an acid mixture containing HF and HNO3 and annihilate after annealing at 175 °C for 30 min. The origin of these traps has been studied by isochronal annealing and various chemical treatments. It is demonstrated that the three electron traps are due to complexes of interstitial chromium and hydrogen.This publication has 14 references indexed in Scilit:
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