2D BORON DISTRIBUTIONS AFTER ION IMPLANT AND TRANSIENT ANNEAL

1 September 1988

journal article
Published by EDP Sciences in Le Journal de Physique Colloques

Vol. 49 (C4) , C4-515
https://doi.org/10.1051/jphyscol:19884107

Abstract

A novel 2D profiling technique of high spatial resolution ( 20 x 20 nm) is used to measure the asymmetry in implanted and transiently annealed boron implants caused by 7° tilt of VLSI wafers during implantation

Keywords

ION IMPLANT
TRANSIENT ANNEAL
2D BORON
BORON DISTRIBUTIONS
DISTRIBUTIONS AFTER ION

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