Interaction between n-type amorphous hydrogenated silicon films and metal electrodes

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Abstract
The interactions of Al and NiCr electrodes with hydrogenated n‐type amorphous silicon films have been investigated in a temperature range of 100–350 °C. It was found that pits were produced in the a‐Si films at temperatures above 170 °C in the case of Al electrodes, while they were not observed in the case of NiCr electrodes even if heat‐treated at a temperature of 350 °C. From the Auger electron spectroscopy measurements, it was shown that a marked interdiffusion of Al and Si occurs. The sheet resistance of the a‐Si films began to increase at temperatures above 170 °C. The contact resistivity between the a‐Si films and Al electrodes could not be determined in the case of a‐Si films with usual low conductivity. For the specimens with high conductivity [σ∼1(Ω cm)−1], the value of about 1×10−3Ω cm2 was obtained.