Oxidation resistance of Pb-Te-Se optical recording film

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Abstract
The dependence of oxidation resistance of metal-Te-Se optical recording films on film composition is investigated, as well as the effects of oxidation on laser beam recorded hole shape. The films are deposited by vacuum evaporation on substrates with a glass/UV light curing resin/cellulose nitrate structure. The role of Se in the film is to inhibit the oxidation. With at least 14% Se addition, film oxidation is completely inhibited even at 60 °C, relative humidity 95%. Depth profiles of elements in the recording films are analyzed by Auger electron and x-ray photoelectron spectroscopy to clarify the mechanisms of oxidation inhibition by Se addition. A selenium condensed layer is found at the inner part of an oxidized surface layer. The surface Te oxide layer and the Se-rich layer should inhibit the film inside from oxidizing. The role of the metallic elements In, Pb, Sn, Bi, and Sb in the film is to inhibit cracking and to decrease noise in reproduced signals by decreasing the size of crystal grains. Lead is found to be the best among these metallic elements, because the recorded hole shape is clean even when recorded after 15 days accelerated oxidation at 60 °C, relative humidity 95%. A very long storage life is expected for the Pb-Te-Se optical recording film.

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