Large periphery, high power pseudomorphic HEMTs
- 1 January 1993
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- A heterostructure FET with 75.8-percent power added efficiency at 10 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- One watt, very high efficiency 10 and 18 GHz pseudomorphic HEMTs fabricated by dry first recess etchingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- 5-GHz band 30 watt power GaAs FETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A C-band 25 watt linear power FETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High-Efficiency and Highly Reliable 20 W GaAs Power Field-Effect Transistor in C BandJapanese Journal of Applied Physics, 1992