Molecular Beam Epitaxial Growth of InP
- 1 December 1976
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 15 (12) , 2321-2325
- https://doi.org/10.1143/jjap.15.2321
Abstract
InP thin crystalline films were grown on (100)-oriented GaAs by molecular beam epitaxy (MBE) and evaluated by RHEED, SEM and IMA. Thin films with high crystalline quality were obtained when the substrate temperature was about 240°C and temperatures of In and P cells were 840~880°C and 370~400°C, respectively. Furthermore, Sn atoms were easily doped into InP during MBE growth, and the surface morphology of InP was greatly improved by Sn doping.Keywords
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