Interaction of longitudinal-optic phonons with free holes as evidenced in Raman spectra from Be-dopedp-type GaAs
- 15 May 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (15) , 10772-10779
- https://doi.org/10.1103/physrevb.41.10772
Abstract
The interaction between small-wave-vector, longitudinal-optic (LO) lattice vibrations and free-hole plasmas in Be-doped p-type GaAs is studied with use of nonresonant, allowed Raman scattering. In contrast to the coupled LO-phonon–plasmon modes, and typically observed in n-type zinc-blende-structure semiconductors, only one mode is observed for hole densities between 1× and 1.6× . With increasing hole density, this single mode shifts first to higher energies, then back to lower energies, between that of the LO and transverse-optic (TO) phonons, and finally asymptotes at the TO-phonon energy. The observed Raman spectra are accurately fitted with calculated coupled-mode spectra which take into account wave-vector-dependent intra- and inter-valence-band transitions within the heavy- and light-hole bands. Intra-light-hole and inter-heavy- to light-hole transitions are shown to make very significant contributions to the spectra, although they alone cannot account for the novel density dependence of the coupled-mode energy. A detailed analysis of the coupled-mode dependence on wave vector and phenomenological damping reveals that the observed density dependence can, in principle, occur even in a single-component plasma due to two distinctly different physical mechanisms. In the case of the p-type GaAs studied here, it is shown that the novel density dependence is primarily due to the overdamped nature of intra-heavy-hole transitions.
Keywords
This publication has 18 references indexed in Scilit:
- Raman scattering study of coupled hole-plasmon–LO-phonon modes in p-type GaAs and p-type AsPhysical Review B, 1987
- Inelastic light scattering from heavily doped and highly compensated GaAs:SiJournal of Applied Physics, 1986
- The dielectric function of holes in semiconductors of zinc-blende structureSolid State Communications, 1986
- Raman scattering by coupled LO-phonon—plasmon modes and forbidden TO-phonon Raman scattering in heavily doped-type GaAsPhysical Review B, 1981
- Nonparabolicity of the conduction band and the coupled plasmon-phonon modes in-GaAsPhysical Review B, 1980
- Raman Scattering by Wave-Vector—Dependent LO-Phonon—Plasmon Modes in-InAsPhysical Review Letters, 1974
- Dielectric parameterization of raman lineshapes for GaP with a plasma of charge carriersApplied Physics A, 1973
- Theoretical and Experimental Study of Raman Scattering from Coupled LO-Phonon-Plasmon Modes in Silicon CarbidePhysical Review B, 1972
- Lindhard Dielectric Function in the Relaxation-Time ApproximationPhysical Review B, 1970
- Coupling of Plasmons to Polar Phonons in Degenerate SemiconductorsPhysical Review B, 1965