Low Temperature Nafion Bonding of Silicon Wafers
- 1 January 1999
- journal article
- Published by The Electrochemical Society in Electrochemical and Solid-State Letters
- Vol. 2 (2) , 86-87
- https://doi.org/10.1149/1.1390743
Abstract
Silicon wafer bonding using intermediate submicrometer Nafion layers was investigated with emphasis in the low temperature region. Bonding was achieved by heating Nafion‐coated wafer pairs. Infrared images revealed voids at annealing temperatures of less than . In the transition region between 75 and void‐free bonds were achieved; however, the Nafion was chemically unstable. Chemically stable Nafion bond formation can be accomplished at annealing temperatures in excess of . ©1999 The Electrochemical SocietyKeywords
This publication has 0 references indexed in Scilit: