Inx(OH)ySzas recombination barrier in TiO2/inorganic absorber heterojunctions
- 8 August 2003
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 18 (9) , 876-880
- https://doi.org/10.1088/0268-1242/18/9/311
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Comparison of different thin film absorbers used in eta-solar cellsThin Solid Films, 2003
- A Solid-State Dye-Sensitized Solar Cell Fabricated with Pressure-Treated P25−TiO2 and CuSCN: Analysis of Pore Filling and IV CharacteristicsChemistry of Materials, 2002
- Nanoporous TiO2/Cu1.8S heterojunctions for solar energy conversionMaterials Science and Engineering: C, 2001
- Photocurrent instability of PbS-sensitized TiO2 electrodes in S2− and SO32− solutionJournal of Photochemistry and Photobiology A: Chemistry, 2001
- Contacts to a solar cell with extremely thin CdTe absorberThin Solid Films, 2001
- The eta-solar cell with CuInS2: A photovoltaic cell concept using an extremely thin absorber (eta)Solar Energy Materials and Solar Cells, 2001
- Composition and structure of CuInS 2 films prepared by spray pyrolysisThin Solid Films, 2000
- Preparation of Indium Hydroxy Sulfide In x ( OH ) y S z Thin Films by Chemical Bath DepositionJournal of the Electrochemical Society, 1998
- Photosensitization of Nanoporous TiO2 Electrodes with InP Quantum DotsLangmuir, 1998
- Quantum-Sized PbS, CdS, Ag2S, Sb2S3, and Bi2S3 Particles as Sensitizers for Various Nanoporous Wide-Bandgap SemiconductorsThe Journal of Physical Chemistry, 1994