Linewidth enhancement factor of 1.3 mu m InGaAsP/InP strained-layer multiple-quantum-well DFB lasers
- 1 October 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 3 (10) , 877-879
- https://doi.org/10.1109/68.93247
Abstract
The linewidth enhancement factor alpha in a 1.3 mu m InGaAsP/InP strained-layer multiple-quantum-well (SL-MQW) distributed feedback (DFB) laser has been evaluated from the relation between the frequency and intensity modulation indexes, and the spontaneous emission spectra below threshold current. It is demonstrated that the measured alpha -parameter of a 1.3 mu m SL-MQW DFB laser is about two, and is much smaller than that in a conventional bulk DFB laser. From the resonance frequency dependence on the output power, it is concluded that this reduction of the alpha -parameter originates in the increased differential gain. The reduction of wavelength chirping, as a result the low alpha -parameter, was experimentally confirmed for the SL-MQW DFB laser.<>Keywords
This publication has 10 references indexed in Scilit:
- TM mode gain enhancement in GaInAs-InP lasers with tensile strained-layer superlatticeIEEE Journal of Quantum Electronics, 1991
- 10 Gbit/s low chirp performance of strained layer multiquantum well DFB laserElectronics Letters, 1991
- Linewidth enhancement factor for InGaAs/InP strained quantum well lasersApplied Physics Letters, 1990
- High quantum efficiency, high power, modulation doped GaInAs strained-layer quantum well laser diodes emitting at 1.5 μmElectronics Letters, 1989
- Linewidth enhancement factor in strained quantum well lasersIEEE Photonics Technology Letters, 1989
- Linewidth enhancement factor in InGaAsP/InP multiple quantum well lasersApplied Physics Letters, 1987
- Nature of wavelength chirping in directly modulated semiconductor lasersElectronics Letters, 1984
- Measurements of the semiconductor laser linewidth broadening factorElectronics Letters, 1983
- Measurement of the linewidth enhancement factor α of semiconductor lasersApplied Physics Letters, 1983
- Theory of the linewidth of semiconductor lasersIEEE Journal of Quantum Electronics, 1982