Photoelectronic and electronic properties of Ti/Si amorphous superlattices
- 15 September 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (11) , 663-665
- https://doi.org/10.1063/1.97561
Abstract
Amorphous Ti/Si superlattices have been prepared by electron beam evaporation. These superlattices exhibit electronic and photoelectronic properties which can be used in a variety of different types of devices. The photovoltaic output from this structure is greatly enhanced by deposition on Si substrates with electrical contacts made only to the superlattice film. The mechanism for the photovoltaic signals and illustrations of different types of devices are discussed.Keywords
This publication has 3 references indexed in Scilit:
- Amorphous Semiconductor SuperlatticesPhysical Review Letters, 1983
- Growth of Periodic Structures by the Molecular-Beam MethodApplied Physics Letters, 1971
- Effect of Gradient Energy on Diffusion in Gold-Silver AlloysJournal of Applied Physics, 1969