Electric passivation of interface traps at drain junction space charge region in p-MOS transistors
- 1 September 2001
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 41 (9-10) , 1427-1431
- https://doi.org/10.1016/s0026-2714(01)00172-x
Abstract
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