Initial Oxidation Processes of H-Terminated Si(100) Surfaces Studied by High-Resolution Electron Energy Loss Spectroscopy

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Abstract
The initial oxidation processes of H-terminated Si(100)-1×1 surfaces have been investigated using high-resolution electron energy loss spectroscopy at room temperature and 300°C. It has been found that oxygen atoms adsorb on one of the two back-bond sites of a surface Si atom until the oxygen coverage is 0.4 and in the sequential oxidation process, other adsorption sites such as the other back-bond sites and/or Si–Si dimer-bond sites, become occupied by oxygen atoms. The structural relaxation in Si–O–Si bonds is observed when a surface Si atom has two Si–O bonds, and is considered to originate from the change in the force constant of Si–O bonds.

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