Metastability and the hydrogen distribution in a-Si:H
- 1 January 1991
- proceedings article
- Published by AIP Publishing in AIP Conference Proceedings
- Vol. 234 (1) , 21-28
- https://doi.org/10.1063/1.41031
Abstract
Studies of metastability relate defect creation to the motion of hydrogen between different bonding sites. The mechanism is discussed in terms of a hydrogen density of states distribution, whose general features are obtained from simple chemical models of hydrogen bonding and weak Si‐Si bonds. The model relates metastability to the equilibrium defect density and to the hydrogen diffusion.Keywords
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