Ultra-thin Silicon Nitride Gate Dielectric For Deep-sub-micron CMOS Devices
- 1 January 1997
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A semi-empirical model for the tunnel current-voltage characteristics in Al-SiO2-Si(p) structuresSolid-State Electronics, 1996
- Highly Reliable Silicon Nitride Thin Films Made by Jet Vapor DepositionJapanese Journal of Applied Physics, 1995
- High-quality MNS capacitors prepared by jet vapor deposition at room temperatureIEEE Electron Device Letters, 1992