Ar ion implantation induced electrical and structural changes in epitaxial YBa2Cu3O7-x thin films
- 1 September 1992
- journal article
- Published by Elsevier in Physica C: Superconductivity and its Applications
- Vol. 199 (3-4) , 269-275
- https://doi.org/10.1016/0921-4534(92)90410-e
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Growth of ceramic thin films on Si(100) using an in situ laser deposition techniqueJournal of Applied Physics, 1991
- Critical current density enhancement in YBa2Cu3O6.8 films on buffered metallic substratesApplied Physics Letters, 1991
- Dependence of crystalline orientation on film thickness in laser-ablated YBa2Cu3O7−δ on LaAlO3Applied Physics Letters, 1991
- Epitaxial yttria-stabilized zirconia on (11̄02)sapphire for YBa2Cu3O7−δ thin filmsApplied Physics Letters, 1991
- High critical currents in strained epitaxial YBa2Cu3O7−δ on SiApplied Physics Letters, 1990
- Modifications of the physical properties of the high- superconductors (0.1≤δ<0.7) by 3.5-GeV xenon ion bombardmentPhysical Review B, 1989
- Fast-neutron irradiation ofPhysical Review B, 1988
- Oxygen ordering and the orthorhombic-to-tetragonal phase transition inPhysical Review B, 1987
- High-pressure study of the new Y-Ba-Cu-O superconducting compound systemPhysical Review Letters, 1987
- Possible highT c superconductivity in the Ba?La?Cu?O systemZeitschrift für Physik B Condensed Matter, 1986