GRINSCH GaAs/AlGaAs laser structures grown by OMVPE using a novel aluminium source

11 October 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (21) , 1762-1764
https://doi.org/10.1049/el:19901132

Abstract

GRINSCH GaAs/AlGaAs laser structures grown by OMVPE using a novel aluminium source, trimethylamine alane, have been successfully fabricated. Broad-area lasers made from the material have a threshold current density of 200 A cm⁻². A V-grooved laser with a monolithically integrated intracavity loss modulator was used to vary the threshold current from I_th = 15 mA at an absorber voltage of V_S = 2.5 V to I_th = 210 mA for V_S = −2.5 V.

Keywords

ABSORBER VOLTAGE
GAAS
BROAD-AREA LASERS
GAAS-ALGAAS
MONOLITHICALLY INTEGRATED INTRACAVITY LOSS MODULATOR
TRIMETHYLAMINE ALANE
OMVPE
ALUMINIUM SOURCE
THRESHOLD CURRENT DENSITY
V-GROOVED LASER
GRINSCH LASER STRUCTURES