Electrical and seebeck effect measurements in Nb doped VO2
- 1 January 1982
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 43 (3) , 205-211
- https://doi.org/10.1016/0022-3697(82)90180-9
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Fast pulse measurements of the dielectric constant of semiconducting VO2Physics Letters A, 1975
- Energy Bands of Semiconducting VPhysical Review B, 1973
- Contribution to the study of the metal-insulator transition in the V1−xNbxO2 system: I — crystallographic and transport propertiesJournal of Physics and Chemistry of Solids, 1972
- The present position of theory and experiment for VO2Materials Research Bulletin, 1970
- Electronic Properties of Vnear the Semiconductor-Metal TransitionPhysical Review B, 1969