Electrical Characteristics of AlO$_x$N$_y$ Prepared by Oxidation of Sub-10-nm-thick AlN Films for MOS Gate Dielectric Applications
- 1 December 2000
- journal article
- Published by Korean Physical Society in Journal of the Korean Physical Society
- Vol. 37 (6)
- https://doi.org/10.3938/jkps.37.886
Abstract
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