Magnetic-field-induced metal-nonmetal transition in GaAs-As heterostructures
- 15 April 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (8) , 5935-5938
- https://doi.org/10.1103/physrevb.33.5935
Abstract
The metal-nonmetal transition in GaAs- As heterostructures has been investigated using electrical conductivity and Hall measurements in the presence of a magnetic field and hydrostatic pressure. The binding energy of a magnetodonor, composed of donor atoms and electrons separated from each other by a spacer, has been measured as a function of magnetic field for different surface densities controlled by the pressure. A simple model is presented which accounts qualitatively for the observed effects.
Keywords
This publication has 14 references indexed in Scilit:
- Effect of magnetic field on the energy levels of a hydrogenic impurity center in GaAs/As quantum-well structuresPhysical Review B, 1985
- Validity of the effective-mass approximation for shallow impurity states in narrow superlatticesPhysical Review B, 1983
- Energy levels of hydrogenic impurity states in GaAs-Ga1−xAlxAs quantum well structuresSolid State Communications, 1983
- Energy spectra of donors inquantum well structures in the effective-mass approximationPhysical Review B, 1982
- Impurity photoluminescence in GaAs/Ga1−xAlxAs multiple quantum wellsSolid State Communications, 1982
- Extrinsic photoluminescence from GaAs quantum wellsPhysical Review B, 1982
- Magnetic freeze-out in doped semiconductors the metal non-metal transition in n-type InSbPhilosophical Magazine Part B, 1980
- Magnetically induced impurity banding in n-InSbJournal of Physics and Chemistry of Solids, 1958
- Effect of a magnetic field on donor impurity levels in InSbJournal of Physics and Chemistry of Solids, 1956
- Hydrogen atom in a strong magnetic fieldJournal of Physics and Chemistry of Solids, 1956