Large-area back-illuminated InGaAs/InP photodiodes for use at 1 to 1.6 μm wavelength
- 15 July 1981
- journal article
- Published by Elsevier in Optics Communications
- Vol. 38 (2) , 124-126
- https://doi.org/10.1016/0030-4018(81)90213-3
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- High-Speed Digital Lightwave Communication Using LEDs and PIN Photodiodes at 1.3 μmBell System Technical Journal, 1980
- Small area InGaAs/InP p-i-n photodiodes: fabrication, characteristics and performance of devices in 274 Mb/s and 45 Mb/s lightwave receivers at 1.31 μm wavelengthElectronics Letters, 1980
- InGaAsP p-i-n photodiodes with low dark current and small capacitanceElectronics Letters, 1979