Interfacial Reactions in Plasma‐Grown Native Oxide ‐ GaAs Structures
- 1 October 1980
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 127 (10) , 2269-2273
- https://doi.org/10.1149/1.2129390
Abstract
The presence and growth of elemental arsenic in as‐grown and thermally annealed plasma oxidized films have been studied using Raman scattering and x‐ray photoemission. The origin of arsenic growth observed in the annealed samples is fully consistent with the presence of a thermodynamically driven interfacial reaction involving in the film and the substrate. The products of this reaction are and As.Keywords
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