Substrate bias effects in high-aspect-ratio SiO2 contact etching using an inductively coupled plasma reactor
- 1 May 1995
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 13 (3) , 853-858
- https://doi.org/10.1116/1.579841
Abstract
No abstract availableKeywords
This publication has 0 references indexed in Scilit: