Si+ implantation: A pretreatment method for diamond nucleation on a Si wafer

12 June 1995

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 66 (24) , 3284-3286
https://doi.org/10.1063/1.113731

Abstract

Diamond films have been obtained by the hot‐filament chemical vapor deposition method on a silicon wafer. The substrates were preimplanted by a Si⁺ ion beam (ion energy 25 keV, implantation dosage 2×10¹⁷ Si/cm²). X‐ray diffraction, scanning electron microscopy, and Raman spectroscopy were used to characterize the structure of the synthesized films. The mechanisms for diamond nucleation on a Si wafer have been discussed. Surface stress is believed to be one of the most important factors for low pressure diamond nucleation on the Si wafer.

Keywords

DIAMONDS
CHEMICAL VAPOR DEPOSITION
SILICON
NUCLEATION
ION IMPLANTATION
SURFACE TREATMENTS
X−RAY DIFFRACTION
SCANNING ELECTRON MICROSCOPY
RAMAN SPECTROSCOPY
STRESSES

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