The coalescence of [001] diamond grains heteroepitaxially grown on (001) silicon
- 16 December 1996
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (25) , 3902-3904
- https://doi.org/10.1063/1.117564
Abstract
The coalescence of diamond grains grown by microwave plasma chemical vapor deposition was observed at an atomic level using high resolution electron microscopy in combination with scanning electron microscopy. It was shown that large diamond crystals can be grown either by a coalescence of two [001]-oriented grains which have a slight misorientation or by a switch of the grain boundary, which is usually perpendicular to the surface plane, to a parallel direction. A single crystalline film might be deposited when the growing surface is fully covered by the (001) plane, i.e., no {111} top facet appears to separate the growing (001) surface.Keywords
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