Preparation of tin oxide and insulating oxide thin films for multilayered gas sensors

1 November 1991

proceedings article
Published by SPIE-Intl Soc Optical Eng

Vol. 1519, 8-14
https://doi.org/10.1117/12.47298

Abstract

Crack-free SnO₂ and SiO₂ films with the controlled thickness up to 1 micrometers have been prepared by the sol-gel spin coating method. Preparation conditions and microstructure of the films are described. Gas sensing elements consisting of single SnO₂ thin film and multi-layered SiO₂/SnO₂ thin films have been prepared using this method. Comparison of sensing properties between single SnO₂ thin film and multi-layered thin film sensing elements shows potential advantage for developing selective gas sensors.

Keywords

FILMS
GAS SENSORS
MICROSTRUCTURE
OXIDE AND INSULATING
SENSING ELEMENTS
SINGLE SNO2
SNO2 THIN
THIN FILM

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