Epi-less bond-and-etch-back silicon-on-insulator by MeV ion implantation
- 17 June 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (24) , 2779-2781
- https://doi.org/10.1063/1.104784
Abstract
A modified approach to silicon‐on‐insulator (SOI) by bond‐and‐etch‐back technology was studied where a high‐energy (MeV) boron implant was utilized as an etch stop to eliminate the need for an epitaxial layer growth in forming a device film. Also a second (retro) MeV implant, applied after the first stage of the etch‐back process, was investigated as an improved method for achieving uniform thinning of a thick (3 μm) SOI film. Significantly improved thickness uniformities (σ<10 nm across a 3×3 in. area) were obtained by this method for a 490‐nm‐thick silicon device film.Keywords
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