The dopant and compound forming behavior of As and Au impurities in Ga2Te3
- 15 January 1992
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 71 (2) , 744-749
- https://doi.org/10.1063/1.351337
Abstract
The dopant and compound forming behavior of As and Au impurities in Ga2Te3 is investigated by the combined application of Mössbauer spectroscopy, x‐ray diffraction, optical transmission, and electrical measurements. Arsenic is shown to act as a n‐type dopant in Ga2Te3, and a ternary semiconductor AuGa2Te3 is identified. The results allow for a concise description of the ohmic contact formation mechanism in alloyed Au/Te/Au/GaAs and related structures.This publication has 28 references indexed in Scilit:
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