Low Temperature Epitaxial Silicon Growth in a Rapid Thermal Processor
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Large-Grain Polysloon Films Depied by Raped Thermal IPCVDMRS Proceedings, 1990
- Applications of rapid thermal processing to silicon epitaxySemiconductor Science and Technology, 1988
- Low Temperature Silicon Epitaxy by Hot Wall Ultrahigh Vacuum/Low Pressure Chemical Vapor Deposition Techniques: Surface OptimizationJournal of the Electrochemical Society, 1986
- An investigation on surface conditions for Si molecular beam epitaxial (MBE) growthJournal of Vacuum Science & Technology A, 1985
- Interaction of H 2 O with Si(111) and (100): Critical Conditions for the Growth ofJournal of the Electrochemical Society, 1984