Electron mobility in short-channel MOSFET's with series resistances
- 1 August 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 30 (8) , 959-961
- https://doi.org/10.1109/T-ED.1983.21246
Abstract
Electron mobilities have been measured in transistors with channel lengths from 5.0 to 0.5 µm. The originally high low-field mobility µ0≈ 700 cm2/V . s seems to be greatly decreased by parasitic series resitances, to a minor degree also by surface scattering.Keywords
This publication has 0 references indexed in Scilit: