0.85 µm bottom-emitting vertical-cavity surface-emittinglaser diode arrays grown on AlGaAs substrates
- 18 August 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (17) , 1406-1407
- https://doi.org/10.1049/el:19940926
Abstract
The first 0.85 µm 8×8 bottom-emitting vertical-cavity surface-emitting laser diodes (VCSELs) have been grown on AlGaAs substrates. Their characteristics are the same as those of VCSELs grown on GaAs substrate. The authors have also fabricated 8×8 independently addressable VCSEL arrays which exhibited good lasing characteristics and uniform threshold current density.Keywords
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