Formation of Tl-Ca-Ba-Cu-O films by diffusion of Tl into rf-sputtered Ca-Ba-Cu-O
- 19 September 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (12) , 1122-1124
- https://doi.org/10.1063/1.100661
Abstract
Using a rf sputtering method with a single Ca-Ba-Cu-O target (Ca:Ba:Cu=2:2:3), thin films with a thickness of about 1 μm have been deposited on ZrO2 and Si substrates. Diffusion experiments showed that the resistivity can be largely reduced by treating the films in an environment containing O2 and Tl. Treatment experiments at different temperatures further showed that the resistivity was affected by the temperature. By treating at 730 °C for about 1 h, a film on ZrO2 with a transition temperature of about 110 K has been obtained. Zero resistance was achieved at 75 K.Keywords
This publication has 3 references indexed in Scilit:
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- New 120 K Tl-Ca-Ba-Cu-O superconductorApplied Physics Letters, 1988
- A New High-Tc Oxide Superconductor without a Rare Earth ElementJapanese Journal of Applied Physics, 1988