High-efficiency Ka- and Ku-band MESFET oscillators

14 March 1985

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 21 (6) , 254-255
https://doi.org/10.1049/el:19850181

Abstract

A relationship between GaAs MESFET oscillator efficiency and power and basic device characteristics is given. This has been confirmed by measurements on 16.8 and 28.5 GHz experimental designs, which have demonstrated efficiencies of 28 and 17.6%, respectively.

Keywords

EFFICIENCY
KU-BAND MESFET OSCILLATORS
SHF
KA-BAND
POWER
GAAS
SOLID-STATE MICROWAVE CIRCUITS
III-V SEMICONDUCTORS
28.5 GHZ
16.8 GHZ
DEVICE CHARACTERISTICS

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