Improvement of Focused Ion-Beam Optics in Single-Ion Implantation for Higher Aiming Precision of One-by-One Doping of Impurity Atoms into Nano-Scale Semiconductor Devices
- 1 March 2002
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 41 (Part 2, No) , L287-L290
- https://doi.org/10.1143/jjap.41.l287
Abstract
No abstract availableKeywords
This publication has 0 references indexed in Scilit: