Common-Base Operation of GaN Bipolar Junction Transistors
- 1 January 1999
- journal article
- Published by The Electrochemical Society in Electrochemical and Solid-State Letters
- Vol. 3 (7) , 333-334
- https://doi.org/10.1149/1.1391140
Abstract
Common‐base bipolar junction transistors were operated at current densities up to and temperatures up to . The devices were fabricated with a low damage, dry etch process, and the structure was grown by molecular beam epitaxy. The reverse breakdown voltage of the base‐collector junction decreased with increasing temperature in these unpassivated devices. Simulations show that the bipolar junction transistors are expected to have similar current gain to heterojunction transistors at collector densities above . ©2000 The Electrochemical SocietyKeywords
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