Electrical Characterization of Undoped and Boron‐Doped Polycrystalline Diamond Thin Films
- 1 October 1991
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 138 (10) , 2981-2984
- https://doi.org/10.1149/1.2085352
Abstract
Undoped and boron‐doped polycrystalline diamond thin films have been grown on silicon substrates using microwave plasma‐assisted chemical vapor deposition. Current voltage characteristics of diamond thin films have been measured as a function of annealing in nitrogen gas and hydrogen microwave plasma treatments. Scanning electron microscopy and Raman spectroscopy are used to analyze the nature of films before and after the treatments.Keywords
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