Indirect Energy Gap in GaSe and GaS
- 1 January 1969
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 31 (1) , 129-131
- https://doi.org/10.1002/pssb.19690310115
Abstract
Optical absorption measurements on thick monocrystalline samples of GaSe1−xSx show that in these mixed crystals the lowest energy gap is indirect in the complete range 0 ≦ x ≦ 1. These results are contrary to earlier reports which indicate that GaSe is a direct gap semiconductor. In the case of GaS the absorption spectra allow a tentative identification of the phonons involved in the indirect transition.Keywords
This publication has 2 references indexed in Scilit:
- One- and Two-Phonon Absorptions in GaSe and GaSJournal of the Physics Society Japan, 1968
- The optical absorption edge in layer structuresJournal of Physics and Chemistry of Solids, 1964