Low threshold and low dispersion MOCVD/LPE buried-heterostructure GaAs/GaAlAs lasers

11 October 1984

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 20 (21) , 857-859
https://doi.org/10.1049/el:19840582

Abstract

We report on the first MOCVD/LPE buried-heterostructure lasers realised using a simple LPE burying process, leading to low thresholds and little dispersion in device characteristics.

Keywords

GAAS-GAALAS BH LASERS
SEMICONDUCTOR LASER
LOW THRESHOLDS
LOW DISPERSION
LPE BURYING PROCESS
MOCVD/LPE
BURIED-HETEROSTRUCTURE LASERS

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