Determination of the copper diffusion coefficient in silicon from transient ion-drift
- 1 October 1993
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 57 (4) , 325-328
- https://doi.org/10.1007/bf00332285
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Defect reactions in copper-diffused and quenchedp-type siliconPhysical Review B, 1992
- Gettering of Copper and Iron to Extended Surface Defects in SiliconMaterials Science Forum, 1992
- Transition metals in siliconApplied Physics A, 1983
- Space-charge spectroscopy in semiconductorsPublished by Springer Nature ,1979
- The Effect of Mobile Sodium Ions on Field Enhancement Dielectric Breakdown in SiO[sub 2] Films on SiliconJournal of the Electrochemical Society, 1973
- Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium ArsenideJournal of Applied Physics, 1964
- Theory of Diffusion and Equilibrium Position of Interstitial Impurities in the Diamond LatticePhysical Review B, 1962
- Mobility of Radiation-Induced Defects in GermaniumJournal of Applied Physics, 1961
- Chemical Interactions Among Defects in Germanium and SiliconBell System Technical Journal, 1956
- Distribution of ions in electrolytic solutionsTransactions of the Faraday Society, 1934