Design and performance of digital polysilicon thin-film-transistor circuits on glass

1 January 1994

journal article
Published by Institution of Engineering and Technology (IET) in IEE Proceedings - Circuits, Devices and Systems

Vol. 141 (1) , 56-59
https://doi.org/10.1049/ip-cds:19949947

Abstract

Digital circuits for a fully integrated active matrix liquid-crystal display (LCD) have been designed and fabricated with a low-temperature polysilicon thin-film-transistor process. Measurements of the CMOS inverters, static and dynamic shift registers, line memory latches and output drivers for the display are presented. A comparison is made of the results of measurement and simulation of the circuits using a thin-film-transistor-circuit model developed for the SPICE program. The model was used for the display circuit optimisation. The fully integrated active matrix LCD is also described.

Keywords

LINE MEMORY LATCHES
CMOS INVERTERS
THIN-FILM-TRANSISTOR CIRCUITS
DIGITAL POLYSILICON TFT CIRCUITS
TFT CIRCUIT MODEL
GLASS SUBSTRATE
DISPLAY CIRCUIT OPTIMISATION
POLYCRYSTALLINE SI
SPICE PROGRAM
ACTIVE MATRIX LCD
SHIFT REGISTERS
LOW-TEMPERATURE TFT PROCESS
OUTPUT DRIVERS
LIQUID-CRYSTAL DISPLAY

This publication has 0 references indexed in Scilit: