Microwave characterization of the properties and performance of GaAs Schottky barrier mixer diodes

1 January 1971

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 59 (2) , 288-289
https://doi.org/10.1109/PROC.1971.8138

Abstract

Microwave measurements have been made of the equivalent circuit parameters and performance characteristics of unpackaged GaAs Schottky barrier mixer diodes. The dependence of mixer performance on series inductance, junction capacitance, and series resistance is delineated. Performance of mixer diodes in packaged and unpackaged form is compared.

Keywords

GALLIUM ARSENIDE
SCHOTTKY BARRIERS
SCHOTTKY DIODES
SEMICONDUCTOR DIODES
WIRE
ELECTRICAL RESISTANCE MEASUREMENT
PACKAGING
INDUCTANCE
SEMICONDUCTOR DEVICE MEASUREMENT
CIRCUIT TESTING

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