InP and GaAs components for 40 Gbps applications

13 November 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

No. 10647775,p. 247-250
https://doi.org/10.1109/gaas.2001.964387

Abstract

We have developed a number of products for 40 Gbps applications, including GaAs and InP HEMT modulator drivers, InP-based monolithically integrated PIN-TIA circuits, InP double heterojunction HBT TIAs, and high responsivity dual-absorption PIN diodes. A number of other products are currently in development, including a number of InP DHBT digital circuits.

Keywords

INDIUM PHOSPHIDE
GALLIUM ARSENIDE
HEMTS
DISTRIBUTED AMPLIFIERS
DRIVER CIRCUITS
POWER GENERATION
POWER AMPLIFIERS
OPTICAL AMPLIFIERS
BANDWIDTH
GAIN

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