Analysis of surface-induced degradation of GaAs power MESFET's

1 April 1985

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 6 (4) , 192-194
https://doi.org/10.1109/edl.1985.26093

Abstract

Long-term degradation of GaAs power MESFET's is shown to be surface induced. Using micro-Auger analysis (beam spot size ≃0.1-0.2 µm), we have identified a gallium outdiffusion induced by the SiO2surface protection deposition and a GaAs oxidation mechanism during electrical operation. These reactions modify the electrical surface properties in the access regions explaining the RF and dc performances degradation.

Keywords

DEGRADATION
GALLIUM ARSENIDE
MESFETS
AGING
LIFE TESTING
MANUFACTURING
CURRENT MEASUREMENT
POWER MEASUREMENT
GAIN MEASUREMENT
RADIOFREQUENCY IDENTIFICATION

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