Cutting of multiwalled carbon nanotubes by a negative voltage tip of an atomic force microscope: A possible mechanism
- 16 September 2003
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 68 (11) , 113406
- https://doi.org/10.1103/physrevb.68.113406
Abstract
Multiwalled carbon nanotubes (MWNT’s) on Si(5 5 12) surfaces are demonstrated to be cut only by a negatively biased conducting tip of an atomic force microscope (AFM). By scanning with the AFM tip across a 30-nm-diam MWNT in contact mode, we could cut the MWNT only at a negative tip voltage below a threshold. As the tip-moving speed increased, the magnitude of the threshold voltage was increased. A graphite surface was etched in comparison by the same method. It was also etched only at a negative tip voltage below a threshold. As the magnitude of the bias voltage increased, the etch depth of the graphite surface increased exponentially to reach 7.9 nm, a thickness of 23 atomic layers of graphite, at a bias voltage of The etching current from the graphite surface to the negatively biased tip was found to follow the Fowler-Nordheim equation and attributed to field-emission electrons from the negatively biased tip. The etch depth of the graphite surface was also found to follow the bias voltage dependence of the Fowler-Nordheim equation. The graphite etching is thus found to be controlled by the field-emission current so that we may propose a cutting mechanism based on the field-emission current density of the Fowler-Nordheim equation: both the MWNT cutting and graphite etching encounter the same reaction where the activation energy is supplied by electrons that are field emitted from the negatively biased AFM tip.
Keywords
This publication has 17 references indexed in Scilit:
- Electrical cutting and nicking of carbon nanotubes using an atomic force microscopeApplied Physics Letters, 2002
- Coulomb blockade in multiwalled carbon nanotube island with nanotube leadsApplied Physics Letters, 2001
- Carbon Nanotube Single-Electron Transistors at Room TemperatureScience, 2001
- Diameter-controlled growth of carbon nanotubes using thermal chemical vapor depositionChemical Physics Letters, 2001
- Electronic properties of mechanically induced kinks in single-walled carbon nanotubesApplied Physics Letters, 2001
- Fabrication of nanometer size gaps in a metallic wireApplied Physics Letters, 2000
- Single-wall carbon nanotube circuits assembled with an atomic force microscopeApplied Physics Letters, 1999
- Manipulation of Individual Carbon Nanotubes and Their Interaction with SurfacesThe Journal of Physical Chemistry B, 1998
- Length control of individual carbon nanotubes by nanostructuring with a scanning tunneling microscopeApplied Physics Letters, 1997
- Helical microtubules of graphitic carbonNature, 1991