Defect formation in H implantation of crystalline Si

The distributions of H atoms, displaced Si atoms, and vacancy-type defects in Si(100) produced by the implantation, at room temperature, of 1×${10}^{16}$ 35-, 60-, and 100-keV ${\mathrm{H}}^{+}$-ions/${\mathrm{cm}}^2$ were measured with use of ion and slow-positron beam techniques. Three different regions of damage were observed. The damage distribution did not correlate with the deposited energy distribution. A vacancy-type damage region surviving room-temperature annealing and the dynamic annealing during implantation is produced in the region where the energy of the primary Si recoils exceeds a threshold value of 2.0±0.5 keV, i.e., an energy spike is needed for damage formation. In the region of the deposited energy peak, H is associated with damage consisting of SiH centers and vacancy complexes. At the end region of the implantation range, the distribution of displaced Si atoms is produced by H impurities in crystalline Si. Two different recovery stages were observed. The first stage, at 500 K, is associated with the damage region containing vacancy-type defects and SiH centers with vacancy complexes; the recovery energy is 1.7 eV. The second stage, at 700 K, is attributed to the end region of the H range, where the recovery energy associated with the recrystallization of Si after the H loss is 2.1 eV.