Generation and Annihilation of Intrinsic-Related Defect Centers in 4H/6H-SiC
- 1 January 2001
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 353-356, 439-442
- https://doi.org/10.4028/www.scientific.net/msf.353-356.439
Abstract
No abstract availableKeywords
This publication has 0 references indexed in Scilit: