Electrical and Galvanomagnetic Properties of Bismuth–12 Atomic Percent Antimony Polycrystalline Thin Films

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Abstract
Polycrystalline thin films of bismuth-12 at% antimony alloy were deposited on heated glass slides in a specially designed vacuum evaporation unit and were characterised using x-ray powder diffraction technique. Resistivity, temperature coefficient of resistance, Seebeck coefficient and Hall coefficient of these films were measured at room temperature as a function of its thickness (300–4000 Å). The Hall voltage varied linearly with magnetic field whereas the transverse and longitudinal magnetoresistance increased with the field. Temperature dependence (100–375 K) of conductivity, Hall coefficient and magnetoresistance were also studied. Attempts have been made to explain the results obtained on the basis of boundary size effect, grain boundary and surface states scattering.

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